Dual-gate MoS2 transistors with sub-10 nm top-gate high-k dielectrics
نویسندگان
چکیده
منابع مشابه
Effect Of Fringing Capacitances In Sub 100 Nm Mosfet's With High-K Gate Dielectrics
In this paper we look at the quantitative picture of fringing field efSects by use of high-k dielectrics on the 70 nm node CMOS technologies. By using Monte-Carlo based techniques, we extract the degradation in gate-to-channel capacitance and the internal, external fringing capacitance components for varying values of K. Our results clearly show the decrease in external fringing capacitance, in...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2018
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.5027102